product description ssw-208 dc-4 ghz, high isolation gaas mmic spdt switch product features ? high isolation: 22db at 2ghz ? low dc power consumption ? low insertion loss: 0.9db at 2ghz ? broad performance - true dc operation ? low cost small outline plastic package applications ? analog/digital wireless system ? spread spectrum ? gps the information provided herein is believed to be reliable at press time. stanford microdevices assumes no responsibility for inaccuracies or omissions. stanford microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party . stanford microdevices does not authorize or warrant any stanford microdevices product for use in life-support devices and/or systems. copyright 1999 stanford microdevices, inc. all worldwide rights reserved. 522 almanor ave., sunnyvale, ca 94086 phone: (800) smi-mmic http://www.stanfordmicro.com stanford microdevices ssw-208 is a high perfomance gallium arsenide field effect transistor mmic switch housed in a low-cost surface-mountable small outline plastic package. this single-pole, double-throw, non-reflective switch consumes less than 50ua and operates at -5v and 0v for control bias. its high isolation and low insertion loss makes it ideal for t/r switching in analog and digital wireless communication systems. the die is fabricated using 0.5 micron fet process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. electrical specifications at ta = 25c symbol parameters: test conditions units min. typ . max. ins insertion loss f = 0.05-1.0ghz f = 1.00-2.0ghz f = 2.00-4.0ghz db db db 0.8 0.9 1.4 1.3 1.4 isol isolation f = 0.05-1.0ghz f = 1.00-2.0ghz f = 2.00-4.0ghz db db db 25 20 40 30 25 vsw ron input & output vswr (on or low loss state) f = 0.05-1.0ghz f = 1.00-2.0ghz f = 2.00-4.0ghz 1.15 1.25 1.50 p1db output power at 1db compression f = 0.5-4.0ghz v = -5v v = -8v dbm dbm +26 +29 to ip third o rder intercep t p oint f = 0.5-4.0ghz v = -5v v = -8v dbm dbm +45 +48 id device current ua 40 isw switching speed 50% control to 10%/90%rf nsec 3 isolation vs. frequency v control = -5 v ghz db -70 -60 -50 -40 -30 -20 dc 1 2 3 4 switches 7-13
absolute maximum ratings truth table ssw-208 dc-6 ghz absorptive spdt gaas switch 522 almanor ave., sunnyvale, ca 94086 phone: (800) smi-mmic http://www.stanfordmicro.com pin out rf input power 2w max>500mhz control voltage -10v operating temperature -45c to +85c storage temperature -65c to +150c thermal resistance 20 deg c/w v1 v2 j1-j2 j1-j3 0 -5 low loss isolation -5 0 isolation low loss pin function 1gnd 2j1 3gnd 4gnd 5j2 6v1 7v2 8j3 db ghz insertion loss vs. frequency v control = -5 v on port input/output vswr vs. frequency v control = -5 v ghz -2.0 -1.5 -1.0 -0.5 0.0 dc1234 1.0 1.2 1.4 1.6 1.8 2.0 dc1234 switches switch schematic 7-14
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